A deep Ultraviolet (UV) photodiode was fabricated using a heterojunction between β-Ga2O3 with a band gap of 4.9 eV, and 6H-SiC with a band gap of 3.02 eV, and investigated its UV sensitivity. A thin β-Ga2O3 layer (200 nm) was prepared on a p-type 6H-SiC substrate through gallium evaporation in oxygen plasma. The device showed good rectifying properties. Under reverse bias, the current increased linearly with increasing deep-UV light intensity. The responsivity of the photodiode was highest to deep-UV light below a wavelength of 260 nm. The photodiode's response time to deep-UV light was in the order of milliseconds.

1.
R.
Dahal
,
T. M.
Tahtamouni
,
Z. Y.
Fan
,
J. Y.
Lin
, and
H. X.
Jiang
,
Appl. Phys. Lett.
90
,
263505
(
2007
).
2.
E.
Munoz
,
E.
Monroy
,
L.
Pauj
,
F.
Calle
,
E.
Caleja
,
F.
Omnes
, and
P.
Gibart
,
Phys. Status Solidi A
180
,
293
(
2000
).
3.
S. S.
Chan
,
R. D.
Mckeag
,
M. D.
Whitfield
, and
R. B.
Jackman
,
Phys. Status Solidi A
154
,
445
(
1996
).
4.
Y.
Kokubun
,
K.
Miura
,
F.
Endo
, and
S.
Nakagomi
,
Appl. Phys. Lett.
90
,
031912
(
2007
).
5.
R.
Suzuki
,
S.
Nakagomi
,
Y.
Kokubun
,
N.
Arai
, and
S.
Ohira
,
Appl. Phys. Lett.
94
,
222102
(
2009
).
6.
T.
Oshima
,
T.
Okuno
,
N.
Arai
,
N.
Suzuki
,
S.
Ohira
, and
S.
Fujita
,
Appl. Phys. Express
1
,
011202
(
2008
).
7.
T.
Oshima
,
T.
Okuno
,
N.
Arai1
,
N.
Suzuki
,
H.
Hino
, and
S.
Fujita
,
Jpn. J. Appl. Phys., Part 1
48
,
011605
(
2009
).
8.
M.
Fleischer
,
W.
Hanrieder
, and
H.
Meixner
,
Thin Solid Films
190
,
93
(
1990
).
9.
G. A.
Battiston
,
R.
Gerbasi
,
M.
Porchia
,
R.
Bertoncello
, and
F.
Caccavale
,
Thin Solid Films
279
,
115
(
1996
).
10.
M.
Orita
,
H.
Ohta
,
M.
Hirano
, and
H.
Hosono
,
Appl. Phys. Lett.
77
,
4166
(
2000
).
11.
E. G.
Villora
,
K.
Shimamura
,
K.
Kitamura
, and
K.
Aoki
,
Appl. Phys. Lett.
88
,
031105
(
2006
).
12.
A.
Trinchi
,
W.
Wlodarski
, and
Y. X.
Li
,
Sens. Actuators B
100
,
94
(
2004
).
13.
W. Y.
Weng
,
S. J.
Chang
,
G. J.
Huang
,
H. T.
Hsueh
, and
T. J.
Hsueh
,
IEEE Sens. J.
11
,
999
(
2011
).
14.
S.
Nakagomi
and
Y.
Kokubun
,
J. Cryst. Growth
349
,
12
(
2012
).
15.
M.
Mohamed
,
C.
Janowitz
,
R.
Manzke
,
K.
Irmscher
,
Z.
Galazka
, and
R.
Fornari
,
Appl. Phys. Lett.
101
,
132106
(
2012
).
16.
S. Y.
Davydov
,
Semiconductors
41
,
696
(
2007
).
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