Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral VAlON center is a promising candidate for spin coherent manipulation and qubit operation.
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Y. Tu, Z. Tang, X. G. Zhao, Y. Chen, Z. Q. Zhu, J. H. Chu, J. C. Fang; A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application. Appl. Phys. Lett. 12 August 2013; 103 (7): 072103. https://doi.org/10.1063/1.4818659
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