Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.
REFERENCES
1.
A. M.
Ionescu
and H.
Riel
, Nature
479
, 329
(2011
).2.
A. C.
Seabaugh
and Q.
Zhang
, Proc. IEEE
98
, 2095
(2010
).3.
W.
Wang
, C. L.
Hinkle
, E. M.
Vogel
, K.
Cho
, and R. M.
Wallace
, Microelectron. Eng.
88
, 1061
(2011
).4.
C. L.
Hinkle
, E. M.
Vogel
, P. D.
Ye
, and R. M.
Wallace
, Curr. Opin. Solid State Mater. Sci.
15
, 188
(2011
).5.
L.
Britnell
, R. V.
Gorbachev
, R.
Jalil
, B. D.
Belle
, F.
Schedin
, A.
Mishchenko
, T.
Georgiou
, M. I.
Katsnelson
, L.
Eaves
, S. V.
Morozov
et al., Science
335
, 947
(2012
).6.
D.
Jena
, Proc. IEEE
101
, 1585
(2013
).7.
E.
Scalise
, M.
Houssa
, G.
Pourtois
, V. V.
Afanas'ev
, and A.
Stesmans
, Nano Res.
5
, 43
(2012
).8.
H.
Fang
, S.
Chuang
, T. C.
Chang
, K.
Takei
, T.
Takahashi
, and A.
Javey
, Nano Lett.
12
, 3788
(2012
).9.
W. S.
Yun
, S. W.
Han
, S. C.
Hong
, I. G.
Kim
, and J. D.
Lee
, Phys. Rev. B
85
, 033305
(2012
).10.
G.
Kresse
and J.
Furthmuller
, Comput. Mater. Sci.
6
, 15
(1996
).11.
P. E.
Blochl
, Phys. Rev. B
50
, 17953
(1994
).12.
J. P.
Perdew
, K.
Burke
, and M.
Ernzerhof
, Phys. Rev. Lett.
77
, 3865
(1996
).13.
D. M.
Ceperley
and B. J.
Alder
, Phys. Rev. Lett.
45
, 566
(1980
).14.
K. F.
Mak
, C.
Lee
, J.
Hone
, J.
Shan
, and T. F.
Heinz
, Phys. Rev. Lett.
105
, 136805
(2010
).15.
T.
Cheiwchanchamnangij
and W. R. L.
Lambrecht
, Phys. Rev. B
85
, 205302
(2012
).16.
H. L.
Shi
, H.
Pan
, Y. W.
Zhang
, and B. I.
Yakobson
, Phys. Rev. B
87
, 155304
(2013
).17.
F.
Aryasetiawan
and O.
Gunnarsson
, Rep. Prog. Phys.
61
, 237
(1998
).18.
J.
Kang
, S.
Tongay
, J.
Zhou
, J. B.
Li
, and J. Q.
Wu
, Appl. Phys. Lett.
102
, 012111
(2013
).19.
Y.
Liang
, S.
Huang
, R.
Soklaski
, and L.
Yang
, Appl. Phys. Lett.
103
, 042106
(2013
).20.
H. P.
Hughes
and H. I.
Starnberg
, Electron Spectroscopies Applied to Low-Dimensional Materials
(Springer
, Berlin
, 2000
).21.
H.
Qiu
, L. J.
Pan
, Z. N.
Yao
, J. J.
Li
, Y.
Shi
, and X. R.
Wang
, Appl. Phys. Lett.
100
, 123104
(2012
).22.
V.
Grasso
, Electronic Structure and Electronic Transitions in Layered Materials
(D. Reidel Publishing Company
, Dordrecht
, 1986
).23.
C.
Gong
, G.
Lee
, B.
Shan
, E. M.
Vogel
, R. M.
Wallace
, and K.
Cho
, J. Appl. Phys.
108
, 123711
(2010
).24.
H.
Peelaers
and C. G.
Van de Walle
, Phys. Rev. B
86
, 241401
(2012
).25.
P.
Johari
and V. B.
Shenoy
, ACS Nano
6
, 5449
(2012
).© 2013 AIP Publishing LLC.
2013
AIP Publishing LLC
You do not currently have access to this content.
