Graphene field effect transistors (GFETs) fabricated by chemical vapor deposition graphene deposited onto SiC substrates exhibit sensitivity to broadband visible light. The hysteretic nature of this GFET type was studied utilizing a new current-voltage measurement technique in conjunction with current-time measurements. This measurement method accounts for hysteretic changes in graphene response and enables transfer measurements that can be attributed to fixed gate voltages. Graphene hysteresis is shown to be consistent with electrochemical p-type doping, and current-time measurements clearly resolve a hole to electron to hole carrier transition in graphene with a single large change in gate voltage.
REFERENCES
1.
K. S.
Novoselov
, A. K.
Geim
, S. V
Morozov
, D.
Jiang
, M. I.
Katsnelson
, I. V
Grigorieva
, S. V
Dubonos
, and A. A.
Firsov
, Nature
438
, 197
(2005
).2.
T. J.
Echtermeyer
, M. C.
Lemme
, J.
Bolten
, M.
Baus
, M.
Ramsteiner
, and H.
Kurz
, Eur. Phys. J. Spec. Top.
148
, 19
(2007
).3.
S. V.
Morozov
, K. S.
Novoselov
, M. I.
Katsnelson
, F.
Schedin
, D. C.
Elias
, J. A.
Jaszczak
, and A. K.
Geim
, Phys. Rev. Lett.
100
, 016602
(2008
).4.
A. N.
Grigorenko
, M.
Polini
, and K. S.
Novoselov
, Nat. Photonics
6
, 749
(2012
).5.
Z.
Chen
and J.
Appenzeller
, in Electron Devices Meeting, IEDM 2008, San Fransisco, USA, Dec. 15–17 2008
(IEEE International
, 2008
), pp. 1
–4
.6.
F.
Schwierz
, Nat. Nanotechnol.
5
, 487
(2010
).7.
G.
Kalon
, Y. J.
Shin
, V. G.
Truong
, A.
Kalitsov
, and H.
Yang
, Appl. Phys. Lett.
99
, 083109
(2011
).8.
Z.-M.
Liao
, B.-H.
Han
, Y.-B.
Zhou
, and D.-P.
Yu
, J. Chem. Phys.
133
, 044703
(2010
).9.
P.
Joshi
, H. E.
Romero
, A. T.
Neal
, V. K.
Toutam
, and S. A.
Tadigadapa
, J. Phys. Condens. Matter
22
, 334214
(2010
).10.
J.
Chen
, J.
Li
, J.
Yang
, X.
Yan
, B. K.
Tay
, and Q.
Xue
, Appl. Phys. Lett.
99
, 173104
(2011
).11.
P. J.
Wessely
, F.
Wessely
, E.
Birinci
, B.
Riedinger
, and U.
Schwalke
, Electrochem. Solid-State Lett.
15
, K31
(2012
).12.
H.
Pinto
, R.
Jones
, J. P.
Goss
, and P. R.
Briddon
, Phys. Status Solidi A
207
, 2131
(2010
).13.
P. L.
Levesque
, S. S.
Sabri
, C. M.
Aguirre
, J.
Guillemette
, M.
Siaj
, P.
Desjardins
, T.
Szkopek
, and R.
Martel
, Nano Lett.
11
, 132
(2011
).14.
F.
Schedin
, a. K.
Geim
, S. V.
Morozov
, E. W.
Hill
, P.
Blake
, M. I.
Katsnelson
, and K. S.
Novoselov
, Nature Mater.
6
, 652
(2007
).15.
H.
Xu
, Y.
Chen
, J.
Zhang
, and H.
Zhang
, Small
8
, 2833
(2012
).16.
S.
Unarunotai
, Y.
Murata
, C. E.
Chialvo
, H.
Kim
, S.
MacLaren
, N.
Mason
, I.
Petrov
, and J. A.
Rogers
, Appl. Phys. Lett.
95
, 202101
(2009
).17.
A. A.
Kaverzin
, S. M.
Strawbridge
, A. S.
Price
, F.
Withers
, A. K.
Savchenko
, and D. W.
Horsell
, Carbon
49
, 3829
(2011
).18.
R. S.
Sundaram
, C.
Gómez-Navarro
, K.
Balasubramanian
, M.
Burghard
, and K.
Kern
, Adv. Mater.
20
, 3050
(2008
).19.
Z.
Liu
, A. A.
Bol
, and W.
Haensch
, Nano Lett.
11
, 523
(2011
).20.
J. G.
Martínez
, T. F.
Otero
, C.
Bosch-Navarro
, E.
Coronado
, C.
Martí-Gastaldo
, and H.
Prima-Garcia
, Electrochim. Acta
81
, 49
(2012
).21.
G. R.
Turpu
, M. W.
Iqbal
, M. Z.
Iqbal
, and J.
Eom
, Thin Solid Films
522
, 468
(2012
).22.
J.
Chan
, A.
Venugopal
, A.
Pirkle
, S.
McDonnell
, D.
Hinojos
, C. W.
Magnuson
, R. S.
Ruoff
, L.
Colombo
, R. M.
Wallace
, and E. M.
Vogel
, ACS Nano
6
, 3224
(2012
).23.
W.
Li
, C.
Tan
, M.
Lowe
, H.
Abruña
, and D.
Ralph
, ACS Nano
5
, 2264
(2011
).24.
H.
Wang
, Y.
Wu
, C.
Cong
, J.
Shang
, and T.
Yu
, ACS Nano
4
, 7221
(2010
).25.
E. B.
Song
, B.
Lian
, S.
Min Kim
, S.
Lee
, T.-K.
Chung
, M.
Wang
, C.
Zeng
, G.
Xu
, K.
Wong
, Y.
Zhou
, H. I.
Rasool
, D. H.
Seo
, H.-J.
Chung
, J.
Heo
, S.
Seo
, and K. L.
Wang
, Appl. Phys. Lett.
99
, 042109
(2011
).26.
S. A.
Imam
, T.
Deshpande
, A.
Guermoune
, M.
Siaj
, and T.
Szkopek
, Appl. Phys. Lett.
99
, 082109
(2011
).27.
S.
Lee
, E. B.
Song
, S.
Kim
, D. H.
Seo
, S.
Seo
, T.
Won Kang
, and K. L.
Wang
, Appl. Phys. Lett.
100
, 023109
(2012
).28.
W.
Wu
, Z.
Liu
, L. A.
Jauregui
, Q.
Yu
, R.
Pillai
, H.
Cao
, J.
Bao
, Y. P.
Chen
, and S.-S.
Pei
, Sens. Actuators B
150
, 296
(2010
).29.
Y.
Lu
, B. R.
Goldsmith
, N. J.
Kybert
, and a. T. C.
Johnson
, Appl. Phys. Lett.
97
, 083107
(2010
).30.
Y.
Ohno
, K.
Maehashi
, and K.
Matsumoto
, Biosens. Bioelectron.
26
, 1727
(2010
).31.
D.
Chen
, L.
Tang
, and J.
Li
, Chem. Soc. Rev.
39
, 3157
(2010
).32.
N.
Kurra
, V. S.
Bhadram
, C.
Narayana
, and G. U.
Kulkarni
, Nanotechnology
23
, 425301
(2012
).33.
Z.
Sun
, Z.
Liu
, J.
Li
, G.-A.
Tai
, S.-P.
Lau
, and F.
Yan
, Adv. Mater.
24
, 5878
(2012
).34.
O.
Koybasi
, I.
Childres
, I.
Jovanovic
, and Y. P.
Chen
, Proc. SPIE
8373
, 83730H
(2012
).35.
M. H.
Ervin
, A. M.
Dorsey
, and N. M.
Salaets
, Nanotechnology
20
, 345503
(2009
).36.
Y. G.
Lee
, C. G.
Kang
, U. J.
Jung
, J. J.
Kim
, H. J.
Hwang
, H.-J.
Chung
, S.
Seo
, R.
Choi
, and B. H.
Lee
, Appl. Phys. Lett.
98
, 183508
(2011
).37.
D.
Estrada
, S.
Dutta
, A.
Liao
, and E.
Pop
, Nanotechnology
21
, 85702
(2010
).38.
E.
Carrion
, A.
Malik
, A.
Behnam
, S.
Islam
, and E.
Pop
, in Proceedings of the 70th Device Research Conference, University Park, USA, June 18-20 2012
(IEEE
, 2012
), pp. 183
–184
.39.
See supplementary material at http://dx.doi.org/10.1063/1.4816426 for description of device fabrication process, GFET design parameters, and testing equipment.
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