We investigate the resistive switching behavior of Ba-doped BiFeO3 (BBFO) films grown on single crystalline SrTi0.99Nb0.01O3 substrates. Observation of diode like I-V behavior and reduction in VC with Ba-content in BBFO films have been understood in the context of modifications in its energy band diagram. Also, I-V curves exhibit hysteresis which has been explained on the basis of migration and recombination of oxygen vacancies under field conditions. Furthermore, increment in Ba-content improves the retention property and ON/OFF switching ratio in BFO films which makes them suitable for applications in switching devices.

Topics
Energy levels, Crystallographic defects, Doping, Ferroelectric materials, Magnetic hysteresis, Heterostructures, Polycrystalline material, Resistive switching, Resistive random-access memory
© 2013 AIP Publishing LLC.
2013
AIP Publishing LLC
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