We investigate the resistive switching behavior of Ba-doped BiFeO3 (BBFO) films grown on single crystalline SrTi0.99Nb0.01O3 substrates. Observation of diode like I-V behavior and reduction in VC with Ba-content in BBFO films have been understood in the context of modifications in its energy band diagram. Also, I-V curves exhibit hysteresis which has been explained on the basis of migration and recombination of oxygen vacancies under field conditions. Furthermore, increment in Ba-content improves the retention property and ON/OFF switching ratio in BFO films which makes them suitable for applications in switching devices.
Improvement in resistive switching of Ba-doped BiFeO3 films
Megha Vagadia, Ashish Ravalia, P. S. Solanki, R. J. Choudhary, D. M. Phase, D. G. Kuberkar; Improvement in resistive switching of Ba-doped BiFeO3 films. Appl. Phys. Lett. 15 July 2013; 103 (3): 033504. https://doi.org/10.1063/1.4813551
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