We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

1.
R.
Hanson
,
L.
Kouwenhoven
,
J.
Petta
,
S.
Tarucha
, and
L.
Vandersypen
,
Rev. Mod. Phys.
79
,
1217
(
2007
).
2.
F. A.
Zwanenburg
,
A. S.
Dzurak
,
A.
Morello
,
M. Y.
Simmons
,
L. C. L.
Hollenberg
,
G.
Klimeck
,
S.
Rogge
,
S. N.
Coppersmith
, and
M. A.
Eriksson
,
Rev. Mod. Phys.
85
,
961
(
2013
).
3.
V. N.
Golovach
,
M.
Borhani
, and
D.
Loss
,
Phys. Rev. B
74
,
165319
(
2006
).
4.
K.
Nowack
,
F.
Koppens
,
Y. V.
Nazarov
, and
L.
Vandersypen
,
Science
318
,
1430
(
2007
).
5.
S.
Nadj-Perge
,
S.
Frolov
,
E.
Bakkers
, and
L.
Kouwenhoven
,
Nature
468
,
1084
(
2010
).
6.
Y.
Kato
,
R.
Myers
,
D.
Driscoll
,
A.
Gossard
,
J.
Levy
, and
D.
Awschalom
,
Science
299
,
1201
(
2003
).
7.
G.
Salis
,
Y.
Kato
,
K.
Ensslin
,
D.
Driscoll
,
A.
Gossard
, and
D.
Awschalom
,
Nature
414
,
619
(
2001
).
8.
R.
Deacon
,
Y.
Kanai
,
S.
Takahashi
,
A.
Oiwa
,
K.
Yoshida
,
K.
Shibata
,
K.
Hirakawa
,
Y.
Tokura
, and
S.
Tarucha
,
Phys. Rev. B
84
,
041302
(
2011
).
9.
S.
Csonka
,
L.
Hofstetter
,
F.
Freitag
,
S.
Oberholzer
,
C.
Schonenberger
,
T. S.
Jespersen
,
M.
Aagesen
, and
J.
Nygård
,
Nano Lett.
8
,
3932
(
2008
).
10.
J.
Houel
,
J. H.
Prechtel
,
D.
Brunner
,
C. E.
Kuklewicz
,
B. D.
Gerardot
,
N. G.
Stoltz
,
P. M.
Petroff
, and
R. J.
Warburton
, “High resolution coherent population trapping on a single hole spin in a semiconductor,” preprint arXiv:1307.2000 (
2013
).
11.
S.
Roddaro
,
A.
Fuhrer
,
P.
Brusheim
,
C.
Fasth
,
H. Q.
Xu
,
L.
Samuelson
,
J.
Xiang
, and
C. M.
Lieber
, “Spin States of Holes in Ge/Si Nanowire Quantum Dots,”
Phys. Rev. Lett.
101
,
186802
(
2008
).
12.
H. A.
Nilsson
,
P.
Caroff
,
C.
Thelander
,
M.
Larsson
,
J. B.
Wagner
,
L.-E.
Wernersson
,
L.
Samuelson
, and
H.
Xu
,
Nano Lett.
9
,
3151
(
2009
).
13.
G.
Katsaros
,
P.
Spathis
,
M.
Stoffel
,
F.
Fournel
,
M.
Mongillo
,
V.
Bouchiat
,
F.
Lefloch
,
A.
Rastelli
,
O. G.
Schmidt
, and
S.
De Franceschi
,
Nature Nanotechnol.
5
,
458
(
2010
).
14.
N.
Ares
,
V.
Golovach
,
G.
Katsaros
,
M.
Stoffel
,
F.
Fournel
,
L.
Glazman
,
O. G.
Schmidt
, and
S.
De Franceschi
,
Phys. Rev. Lett.
110
,
046602
(
2013
).
15.
D.
Heiss
,
S.
Schaeck
,
H.
Huebl
,
M.
Bichler
,
G.
Abstreiter
,
J.
Finley
,
D.
Bulaev
, and
D.
Loss
,
Phys. Rev. B
76
,
241306
(
2007
).
16.
V. N.
Golovach
,
A.
Khaetskii
, and
D.
Loss
,
Phys. Rev. Lett.
93
,
016601
(
2004
).
17.
W.
Lu
,
J.
Xiang
,
B. P.
Timko
,
Y.
Wu
, and
C. M.
Lieber
,
Proc. Natl. Acad. Sci.
102
,
10046
(
2005
).
18.
Y.
Hu
,
H. O.
Churchill
,
D. J.
Reilly
,
J.
Xiang
,
C. M.
Lieber
, and
C. M.
Marcus
,
Nat. Nanotechnol.
2
,
622
(
2007
).
19.
Y.
Hu
,
F.
Kuemmeth
,
C. M.
Lieber
, and
C. M.
Marcus
,
Nat. Nanotechnol.
7
,
47
(
2011
).
20.
C.
Kloeffel
,
M.
Trif
,
P.
Stano
, and
D.
Loss
,
Phys. Rev. B
88
,
241405
R
(
2013
).
21.
D.
Sleiter
and
W.
Brinkman
,
Phys. Rev. B
74
,
153312
(
2006
).
22.
S.
De Franceschi
,
S.
Sasaki
,
J.
Elzerman
,
W.
Van Der Wiel
,
S.
Tarucha
, and
L. P.
Kouwenhoven
,
Phys. Rev. Lett.
86
,
878
(
2001
).
23.
See supplementary material at http://dx.doi.org/10.1063/1.4858959 for the derivation of this expression.
24.
The lever arm of a gate electrode is the factor that relates a change of gate voltage to a corresponding shift of the subband energies.
25.
J.
Van den Berg
,
S.
Nadj-Perge
,
V.
Pribiag
,
S.
Plissard
,
E.
Bakkers
,
S.
Frolov
, and
L.
Kouwenhoven
,
Phys. Rev. Lett.
110
,
066806
(
2013
).

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