Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.
Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer
Alexander Tselev, Vinod K. Sangwan, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam, Sergei V. Kalinin; Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer. Appl. Phys. Lett. 9 December 2013; 103 (24): 243105. https://doi.org/10.1063/1.4847675
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