From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

1.
C.
Chappert
,
A.
Fert
, and
F. N.
Van Dau
,
Nat. Mater.
6
,
813
(
2007
).
2.
D. D.
Awschalom
and
M. E.
Flatte
,
Nat. Phys.
3
,
153
(
2007
).
3.
B.
Behin-Aein
,
D.
Datta
,
S.
Salahuddin
, and
S.
Datta
,
Nat. Nanotechnol.
5
,
266
(
2010
).
4.
I.
Zutic
,
J.
Fabian
, and
S. D.
Sarma
,
Rev. Mod. Phys.
76
,
323
(
2004
).
5.
E.
Saitoh
,
M.
Ueda
,
H.
Miyajima
, and
G.
Tatara
,
Appl. Phys. Lett.
88
,
182509
(
2006
).
6.
K.
Ando
,
Y.
Kajiwara
,
K.
Sasage
,
K.
Uchida
, and
E.
Saitoh
,
IEEE Trans. Magn.
46
,
3694
(
2010
).
7.
O.
Mosendz
,
J. E.
Pearson
,
F. Y.
Fradin
,
G. E. W.
Bauer
,
S. D.
Bader
, and
A.
Hoffmann
,
Phys. Rev. Lett.
104
,
046601
(
2010
).
8.
O.
Mosendz
,
V.
Vlaminck
,
J. E.
Pearson
,
F. Y.
Fradin
,
G. E. W.
Bauer
,
S. D.
Bader
, and
A.
Hoffmann
,
Phys. Rev. B
82
,
214403
(
2010
).
9.
Y.
Tserkovnyak
,
A.
Brataas
, and
G. E. W.
Bauer
,
Phys. Rev. Lett.
88
,
117601
(
2002
).
10.
T.
Taniguchi
and
H.
Imamura
,
Phys. Rev. B
76
,
092402
(
2007
).
11.
T.
Taniguchi
and
H.
Imamura
,
Mod. Phys. Lett. B
22
,
2909
(
2008
).
12.
K.
Ando
,
T.
Yoshino
, and
E.
Saitoh
,
Appl. Phys. Lett.
94
,
152509
(
2009
).
13.
C. W.
Sandweg
,
Y.
Kajiwara
,
K.
Ando
,
E.
Saitoh
, and
B.
Hillebrands
,
Appl. Phys. Lett.
97
,
252504
(
2010
).
14.
C.
Burrowes
,
B.
Heinrich
,
B.
Kardasz
,
E. A.
Montoya
,
E.
Girt
,
Y.
Sun
,
Y.-Y.
Song
, and
M.
Wu
,
Appl. Phys. Lett.
100
,
092403
(
2012
).
15.
M. B.
Jungfleisch
,
V.
Lauer
,
R.
Neb
,
A. V.
Chumak
, and
B.
Hillebrands
,
Appl. Phys. Lett.
103
,
022411
(
2013
).
16.
S. S.
Mukherjee
,
P.
Deorani
,
J. H.
Kwon
, and
H.
Yang
,
Phys. Rev. B
85
,
094416
(
2012
).
17.
T.
Gerrits
,
M. L.
Schneider
, and
T. J.
Silva
,
J. Appl. Phys.
99
,
023901
(
2006
).
18.
O.
Mosendz
,
J. E.
Pearson
,
F. Y.
Fradin
,
S. D.
Bader
, and
A.
Hoffmann
,
Appl. Phys. Lett.
96
,
022502
(
2010
).
19.
D. H.
Kim
,
H. H.
Kim
, and
C. Y.
You
,
Appl. Phys. Lett.
99
,
072502
(
2011
).
20.
H.
Nakayama
,
T.
Tashiro
,
R.
Takahashi
,
Y.
Kajiwara
,
T.
Ohtani
,
K.
Ando
,
R.
Iguchi
,
K.
Uchida
,
T.
Yoshino
, and
E.
Saitoh
,
Key Eng. Mater.
508
,
347
(
2012
).
21.
K.
Ando
and
E.
Saitoh
,
Nat. Commun.
3
,
1640
(
2012
).
22.
F. J.
Jedema
,
A. T.
Filip
, and
B. J.
van Wees
,
Nature
410
,
345
(
2001
).
23.
K.
Ando
and
E.
Saitoh
,
J. Appl. Phys.
108
,
113925
(
2010
).
24.
C.
Kittel
,
Introduction to Solid State Physics
(
Wiley
,
1996
).
25.
K.
Stella
,
Electronic Dissipation Processes During Chemical Reactions on Surfaces
(
Disserta
,
Verlag
,
2011
).
26.
T. J.
Silva
,
C. S.
Lee
,
T. M.
Crawford
, and
C. T.
Rogers
,
J. Appl. Phys.
85
,
7849
(
1999
).
27.
J. H.
Kwon
,
S. S.
Mukherjee
,
P.
Deorani
,
M.
Hayashi
, and
H.
Yang
,
Appl. Phys. A
111
,
369
(
2013
).
28.
L. Q.
Liu
,
C. F.
Pai
,
Y.
Li
,
H. W.
Tseng
,
D. C.
Ralph
, and
R. A.
Buhrman
,
Science
336
,
555
(
2012
).
29.
T.
Kimura
,
Y.
Otani
,
T.
Sato
,
S.
Takahashi
, and
S.
Maekawa
,
Phys. Rev. Lett.
98
,
156601
(
2007
).
30.
L. Q.
Liu
,
T.
Moriyama
,
D. C.
Ralph
, and
R. A.
Buhrman
,
Phys. Rev. Lett.
106
,
036601
(
2011
).
31.
S.
Mizukami
,
Y.
Ando
, and
T.
Miyazaki
,
Phys. Rev. B
66
,
104413
(
2002
).
32.
E.
Gharibshahi
and
E.
Saion
,
Int. J. Mol. Sci.
13
,
14723
(
2012
).
33.
S. O.
Kasap
,
Principles of Electronic Materials and Devices
(
McGraw-Hill
,
2005
).
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