We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.
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See supplementary material at http://dx.doi.org/10.1063/1.4836235 for the pictorial depiction of the SEM images of the ZnO wavy channel transistor, no delamination in ZnO film, electrical characteristics supporting the hypothesis of L-shaped field enhancement.
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