We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs), using full-band ballistic quantum transport simulations, with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, suppression of drain-induced barrier lowering, and gate-induced drain leakage. However, these full-band simulations exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2.
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25 November 2013
Research Article|
November 26 2013
Atomistic full-band simulations of monolayer MoS2 transistors
Jiwon Chang;
Jiwon Chang
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Leonard F. Register;
Leonard F. Register
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Sanjay K. Banerjee
Sanjay K. Banerjee
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Appl. Phys. Lett. 103, 223509 (2013)
Article history
Received:
August 28 2013
Accepted:
November 15 2013
Citation
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee; Atomistic full-band simulations of monolayer MoS2 transistors. Appl. Phys. Lett. 25 November 2013; 103 (22): 223509. https://doi.org/10.1063/1.4837455
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