We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs), using full-band ballistic quantum transport simulations, with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, suppression of drain-induced barrier lowering, and gate-induced drain leakage. However, these full-band simulations exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2.
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Research Article| November 26 2013
Atomistic full-band simulations of monolayer MoS2 transistors
Leonard F. Register;
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee; Atomistic full-band simulations of monolayer MoS2 transistors. Appl. Phys. Lett. 25 November 2013; 103 (22): 223509. https://doi.org/10.1063/1.4837455
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