We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖ [100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.
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For the growth of EuO on epitaxial diamond film substrates, the thermal expansion mismatch between EuO and silicon would lead to an in-plane tensile strain of 0.6% and an out-of-plane lattice spacing of 5.127 Å for the 25 °C XRD measurement, assuming that the EuO film is fully relaxed at growth temperature. Using the same assumptions for the growth of EuO on single crystal diamond substrates, the thermal expansion mismatch between EuO and single-crystal diamond would lead to an in-plane tensile strain of 0.7% and an out-of-plane lattice spacing of 5.123 Å for the 25 °C XRD measurement. The measured out-of-plane lattice spacings (5.137 Å and 5.135 Å, respectively) implies that the EuO film was not fully relaxed at the growth temperature, but was clamped during cooling. Alternatively, the film was fully relaxed at the growth temperature, but not fully clamped to the substrate during cooling.
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