We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni80Fe20(/MgO)/Ag or Co50Fe50/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current IS/IC up to 0.55 is realized.

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