Impact of interface properties on spin accumulation in dual-injection lateral spin valves

We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni₈₀Fe₂₀(/MgO)/Ag or Co₅₀Fe₅₀/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current I_S/I_C up to 0.55 is realized.