We study spin accumulation in dual-injection lateral spin valves (DLSVs) with Ni80Fe20(/MgO)/Ag or Co50Fe50/MgO/Ag junctions. In Ohmic NiFe/Ag junctions, there is negligible enhancement in the spin accumulation for the dual scheme compared with the conventional single scheme. In contrast, large spin valve signals of 233 and 480 m Ω are observed for DLSVs with NiFe/MgO/Ag and CoFe/MgO/Ag junctions, respectively. The experimental results are analyzed with a one-dimensional spin diffusion model, taking into account the junctions and their structures. The efficient generation of a pure spin current IS/IC up to 0.55 is realized.
Impact of interface properties on spin accumulation in dual-injection lateral spin valves
H. Idzuchi, S. Karube, Y. Fukuma, T. Aoki, Y. Otani; Impact of interface properties on spin accumulation in dual-injection lateral spin valves. Appl. Phys. Lett. 14 October 2013; 103 (16): 162403. https://doi.org/10.1063/1.4824897
Download citation file: