We demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots (QDs) at wavelengths above 1.5 μm that are compatible with standard long-distance fiber communication. The QDs are grown by molecular beam epitaxy on distributed Bragg reflectors. A low QD density of about 5 × 108 cm−2 was obtained using optimized growth conditions. Low-temperature micro-photoluminescence spectroscopy exhibits sharp excitonic emission lines from single QDs without the necessity of further processing steps. The combination of excitation power-dependent and polarization-resolved photoluminescence measurements reveal a characteristic exciton-biexciton behavior with biexciton binding energies that range from 3.5 to 4 meV and fine-structure splitting values down to 20 μeV.
Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots
M. Benyoucef, M. Yacob, J. P. Reithmaier, J. Kettler, P. Michler; Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots. Appl. Phys. Lett. 14 October 2013; 103 (16): 162101. https://doi.org/10.1063/1.4825106
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