In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO2/4H-SiC interfaces during post-deposition-annealing (PDA) in N2O or POCl3 of a 45 nm thick oxide. In particular, a nanoscale characterization using scanning capacitance microscopy on the cross section of metal-oxide-semiconductor capacitors allowed to determine the electrically active nitrogen and phosphorous concentration under the SiO2 layer after PDA in N2O and POCl3, i.e., 5 × 1017 cm−3 and 4.5 × 1018 cm−3, respectively. The technological implications have been discussed considering the possible impact of a PDA-induced “counter doping” of the p-type body region of a n-channel metal-oxide-semiconductor-field-effect-transistor on the device threshold voltage.

1.
M.
Shur
,
S.
Rumyanstev
, and
M.
Levinshtein
,
SiC Materials and Devices
, Vol.
1
. (
World Scientific
,
Singapore
,
2006
)
2.
F.
Roccaforte
,
F.
Giannazzo
, and
V.
Raineri
,
J. Phys. D: Appl. Phys.
43
,
223001
(
2010
) and references therein.
3.
J.
Millán
,
IET Circuits Devices Syst.
1
,
372
(
2007
).
4.
K.
Matocha
,
Solid-State Electron.
52
,
1631
(
2008
).
5.
F.
Roccaforte
,
P.
Fiorenza
, and
F.
Giannazzo
,
ECS J. Solid State Sci. Technol.
2
,
N3006
(
2013
).
6.
V. V.
Afanas'ev
,
F.
Ciobanu
,
S.
Dimitrijev
,
G.
Pensl
, and
A.
Stesmans
,
J. Phys.: Condens. Matter
16
,
S1839
S1856
(
2004
).
7.
F.
Ciobanu
,
G.
Pensl
,
V. V.
Afanas'ev
, and
A.
Schöner
,
Mater. Sci. Forum
483–485
,
693
(
2005
).
8.
H.
Li
,
S.
Dimitrijev
,
H. B.
Harrison
, and
D.
Sweatman
,
Appl. Phys. Lett.
70
,
2028
(
1997
).
9.
G. Y.
Chung
,
C. C.
Tin
,
J. R.
Williams
,
K.
McDonald
,
M.
Di Ventra
,
S. T.
Pantelides
,
L. C.
Feldman
, and
R. A.
Weller
,
Appl. Phys. Lett.
76
,
1713
(
2000
).
10.
L. A.
Lipkin
,
M. K.
Das
, and
J. W.
Palmour
,
Mater. Sci. Forum
389–393
,
985
(
2002
).
11.
C.-Y.
Lu
,
J. A.
Cooper
,
T.
Tsuji
,
G.
Chung
,
J. R.
Williams
,
K.
McDonald
, and
L. C.
Feldman
,
IEEE Trans. Electron Devices
50
,
1582
(
2003
).
12.
G. Y.
Chung
,
C. C.
Tin
,
J. R.
Williams
,
K.
McDonald
,
R. K.
Chanana
,
R. A.
Weller
,
S. T.
Pantelides
, and
L. C.
Feldman
,
IEEE Electron Device Lett.
22
,
176
(
2001
).
13.
Y.
Wang
,
T.
Khan
,
M. K.
Balasubramanian
,
H.
Naik
,
W.
Wang
, and
T.
Paul Chow
,
IEEE Trans. Electron Devices
55
,
2046
(
2008
).
14.
S.-H.
Ryu
,
S.
Dhar
,
S.
Haney
,
A.
Agarwal
,
A.
Lelis
,
B.
Geil
, and
C.
Scozzie
,
Mater. Sci. Forum
615–617
,
743
(
2009
).
15.
T. L.
Biggerstaff
,
C. L.
Reynolds
,
T.
Zheleva
,
A.
Lelis
,
D.
Habersat
,
S.
Haney
,
S.-H.
Rryu
,
A.
Agarwal
, and
G.
Duscher
,
Appl. Phys. Lett.
95
,
032108
(
2009
).
16.
J.
Rozen
,
A. C.
Ahyi
,
X.
Zhu
,
J. R.
Williams
, and
L. C.
Feldman
,
IEEE Electron Device Lett.
58
,
3808
(
2011
).
17.
A.
Frazzetto
,
F.
Giannazzo
,
P.
Fiorenza
,
V.
Raineri
, and
F.
Roccaforte
,
Appl. Phys. Lett.
99
,
072117
(
2011
).
18.
D.
Okamoto
,
H.
Yano
,
K.
Hirata
,
T.
Hatayama
, and
T.
Fuyuki
,
IEEE Electron Device Lett.
31
,
710
(
2010
).
19.
Y. K.
Sharma
,
A. C.
Ahyi
,
T.
Issacs-Smith
,
X.
Shen
,
S. T.
Pantelides
,
X.
Zhu
,
L. C.
Feldman
,
J.
Rozen
, and
J. R.
Williams
,
Solid-State Electron.
68
,
103
(
2012
).
20.
T.
Umeda
,
K.
Esaki
,
R.
Kosugi
,
K.
Fukuda
,
T.
Ohshima
,
N.
Morishita
, and
J.
Isoya
,
Appl. Phys. Lett.
99
,
142105
(
2011
).
21.
R.
Kosugi
,
T.
Umeda
, and
Y.
Sakuma
,
Appl. Phys. Lett.
99
,
182111
(
2011
).
22.
G.
Liu
,
A. C.
Ahyi
,
Y.
Xu
,
T.
Isaacs-Smith
,
Y. K.
Sharma
,
J. R.
Williams
,
L. C.
Feldman
, and
S.
Dhar
,
IEEE Electron Device Lett.
34
,
181
(
2013
).
23.
L. K.
Swanson
,
P.
Fiorenza
,
F.
Giannazzo
,
A.
Frazzetto
, and
F.
Roccaforte
,
Appl. Phys. Lett.
101
,
193501
(
2012
).
24.
F.
Giannazzo
,
D.
Goghero
, and
V.
Raineri
J. Vac. Sci. Technol. B
22
,
2391
(
2004
).
25.
F.
Giannazzo
,
L.
Calcagno
,
V.
Raineri
,
L.
Ciampolini
,
M.
Ciappa
, and
E.
Napolitani
,
Appl. Phys. Lett.
79
,
1211
(
2001
).
26.
F.
Giannazzo
,
F.
Roccaforte
, and
V.
Raineri
,
Appl. Phys. Lett.
91
,
202104
(
2007
).
27.
F.
Giannazzo
,
P.
Fiorenza
, and
V.
Raineri
, in
Applied Scanning Probe Methods, X
, edited by
B.
Bhushan
,
H.
Fuchs
, and
M.
Tomitori
(
Springer
,
Berlin
,
2008
).
28.
M.
Laube
,
F.
Schmid
,
G.
Pensl
,
G.
Wagner
,
M.
Linnarsson
, and
M.
Maier
,
J. Appl. Phys.
92
,
549
(
2002
).
29.
M. A.
Capano
,
R.
Santhakumar
,
R
Venugopal
,
M. R.
Melloch
, and
J. A.
Cooper
,
J. Electron. Mater.
29
,
210
(
2000
).
You do not currently have access to this content.