Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel.

1.
J. C.
Scott
and
L. D.
Bozano
,
Adv. Mater.
19
,
1452
(
2007
).
2.
P.
Heremans
,
G. H.
Gelinck
,
R.
Müller
,
K. J.
Baeg
,
D. Y.
Kim
, and
Y. Y.
Noh
,
Chem. Mater.
23
,
341
(
2011
).
3.
W. L.
Leong
,
N.
Mathews
,
B.
Tan
,
S.
Vaidyanathan
,
F.
Dötz
, and
S.
Mhaisalkar
,
J. Mater. Chem.
21
,
5203
(
2011
).
4.
T. B.
Singh
,
N.
Marjanović
,
G. J.
Matt
,
N. S.
Sariciftci
,
R.
Schwödiauer
, and
S.
Bauer
,
Appl. Phys. Lett.
85
,
5409
(
2004
).
5.
K. J.
Baeg
,
Y. Y.
Noh
,
J.
Ghim
,
S. J.
Kang
,
H.
Lee
, and
D. Y.
Kim
,
Adv. Mater.
18
,
3179
(
2006
).
6.
K. J.
Baeg
,
Y. Y.
Noh
,
J. G. B.
Lim
, and
D. Y.
Kim
,
Adv. Funct. Mater.
18
,
3678
(
2008
).
7.
Y. L.
Guo
,
C. A.
Di
,
S. H.
Ye
,
X. N.
Sun
,
J.
Zheng
,
Y. G.
Wen
,
W. P.
Wu
,
G.
Yu
, and
Y. Q.
Liu
,
Adv. Mater.
21
,
1954
(
2009
).
8.
S. J.
Kim
and
J. S.
Lee
,
Nano Lett.
10
,
2884
, (
2010
).
9.
K. J.
Baeg
,
Y. Y.
Noh
,
H.
Sirringhaus
, and
D. Y.
Kim
,
Adv. Funct. Mater.
20
,
224
(
2010
).
10.
S. T.
Han
,
Y.
Zhou
,
Z. X.
Xu
,
V. A. L.
Roy
, and
T. F.
Hung
,
J. Mater. Chem.
21
,
14575
(
2011
).
11.
X. J.
She
,
C. H.
Liu
,
Q. J.
Sun
,
X.
Gao
, and
S. D.
Wang
,
Org. Electron.
13
,
1908
(
2012
).
12.
X.
Gao
,
X. J.
She
,
C. H.
Liu
,
Q. J.
Sun
,
J.
Liu
, and
S. D.
Wang
,
Appl. Phys. Lett.
102
,
023303
(
2013
).
13.
S. D.
Wang
,
T.
Minari
,
T.
Miyadera
,
K.
Tsukagoshi
, and
Y.
Aoyagi
,
Appl. Phys. Lett.
91
,
203508
(
2007
).
14.
X. J.
She
,
C. H.
Liu
,
J. Y.
Zhang
,
X.
Gao
, and
S. D.
Wang
,
Appl. Phys. Lett.
102
,
053303
(
2013
).
15.
S. M.
Sze
,
Physics of Semiconductor Devices
(
Wiley Interscience
,
New York
,
1981
).
16.
M.
Debucquoy
,
M.
Rockele
,
J.
Genoe
,
G. H.
Gelinck
, and
P.
Heremans
,
Org. Electron.
10
,
1252
(
2009
).
17.
Y. L.
Guo
,
J.
Zhang
,
G.
Yu
,
J.
Zheng
,
L.
Zhang
,
Y.
Zhao
,
Y. G.
Wen
, and
Y. Q.
Liu
,
Org. Electron.
13
,
1969
(
2012
).
18.
See supplementary at http://dx.doi.org/10.1063/1.4824213 for transfer characteristics showing VT shifts of Devices X1–X5 after programming/erasing of Device X0 shown in Fig. 2(a).

Supplementary Material

You do not currently have access to this content.