An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented.

1.
M. H.
Huang
,
S.
Mao
,
H.
Feick
,
H.
Yan
,
Y.
Wu
,
H.
Kind
,
E.
Weber
,
R.
Russo
, and
P.
Yang
,
Science (New York, N.Y.)
292
,
1897
1899
(
2001
).
2.
Z. L.
Wang
and
J.
Song
,
Science (New York, N.Y.)
312
,
242
246
(
2006
).
3.
A.
Sawa
,
Mater. Today
11
,
28
36
(
2008
).
4.
H. Y.
Peng
,
G. P.
Li
,
J. Y.
Ye
,
Z. P.
Wei
,
Z.
Zhang
,
D. D.
Wang
,
G. Z.
Xing
, and
T.
Wu
,
Appl. Phys. Lett.
96
,
192113
(
2010
).
5.
Y.
Du
,
H.
Pan
,
S.
Wang
,
T.
Wu
,
Y. P.
Feng
,
J.
Pan
, and
A. T. S.
Wee
,
ACS Nano
6
,
2517
2523
(
2012
).
6.
A.
Shih
,
W.
Zhou
,
J.
Qiu
,
H. J.
Yang
,
S.
Chen
,
Z.
Mi
, and
I.
Shih
,
Nanotechnology
21
,
125201
(
2010
).
7.
L. D.
Bozano
,
B. W.
Kean
,
V. R.
Deline
,
J. R.
Salem
, and
J. C.
Scott
,
Appl. Phys. Lett.
84
,
607
609
(
2004
).
8.
J.
Song
,
Y.
Zhang
,
C.
Xu
,
W.
Wu
, and
Z. L.
Wang
,
Nano Lett.
11
,
2829
2834
(
2011
).
9.
Y. D.
Chiang
,
W. Y.
Chang
, and
C. Y.
Ho
,
IEEE Trans. Electron Devices
58
,
1735
1740
(
2011
).
10.
J.
Qui
,
A.
Shih
,
W.
Zhou
,
Z.
Mi
, and
I.
Shih
,
J. Appl. Phys.
110
,
014513
(
2011
).
11.
D.
Yeom
,
J.
Kang
,
M.
Lee
,
J.
Jang
,
J.
Yun
,
D.-Y.
Jeong
,
C.
Yoon
,
J.
Koo
, and
S.
Kim
,
Nanotechnology
19
,
395204
(
2008
).
12.
Y.
Yang
,
X.
Zhang
,
M.
Gao
,
F.
Zeng
,
W.
Zhou
,
S.
Xie
, and
F.
Pan
,
Nanoscale
3
,
1917
1921
(
2011
).
13.
R. R.
Prabhakar
,
N.
Mathews
,
K. B.
Jinesh
,
K. R. G.
Karthik
,
S. S.
Pramana
,
B.
Varghese
,
C. H.
Sow
, and
S.
Mhaisalkar
,
J. Mater. Chem.
22
,
9678
(
2012
).
14.
See supplementary material at http://dx.doi.org/10.1063/1.4821994 for details about synthesis and charge trapping.
15.
K. R. G.
Karthik
,
H. K.
Mulmudi
,
K. B.
Jinesh
,
N.
Mathews
,
C. H.
Sow
,
Y. Z.
Huang
, and
S. G.
Mhaisalkar
,
Appl. Phys. Lett.
99
,
132105
(
2011
).
16.
S. W.
Yoon
,
J. H.
Seo
,
K.-H.
Kim
,
J.-P.
Ahn
,
T.-Y.
Seong
,
K. B.
Lee
, and
H.
Kwon
,
Thin Solid Films
517
,
4003
4006
(
2009
).
17.
S.
Baruah
and
J.
Dutta
,
Sci. Technol. Adv. Mater.
10
,
013001
(
2009
).
18.
Z. L.
Wang
,
J. Phys.: Condens. Matter
16
,
R829
R858
(
2004
).
19.
Z.-M.
Liao
,
Z.-K.
Lv
,
Y.-B.
Zhou
,
J.
Xu
,
J.-M.
Zhang
, and
D.-P.
Yu
,
Nanotechnology
19
,
335204
(
2008
).
20.
A.
Talin
,
F.
Léonard
,
B.
Swartzentruber
,
X.
Wang
, and
S.
Hersee
,
Phys. Rev. Lett.
101
,
076802
(
2008
).
21.
A.
Motayed
,
A. V.
Davydov
,
M. D.
Vaudin
,
I.
Levin
,
J.
Melngailis
, and
S. N.
Mohammad
,
J. Appl. Phys.
100
,
024306
(
2006
).
22.
J. H.
He
,
P. H.
Chang
,
C. Y.
Chen
, and
K. T.
Tsai
,
Nanotechnology
20
,
135701
(
2009
).
23.
X.-B.
He
,
T.-Z.
Yang
,
J.-M.
Cai
,
C.-D.
Zhang
,
H.-M.
Guo
,
D.-X.
Shi
,
C.-M.
Shen
, and
H.-J.
Gao
,
Chin. Phys. B
17
,
3444
3447
(
2008
).

Supplementary Material

You do not currently have access to this content.