The effect of stoichiometry on the dielectric properties and soft mode behavior of strained epitaxial Sr1+xTiO3+δ films grown on DyScO3 substrates is reported. Direct comparisons between nominally stoichiometric and non-stoichiometric films have been performed through measurements of lattice parameters, temperature-dependent permittivities, second harmonic generation, and terahertz dielectric spectra. The nominally stoichiometric film shows dispersion-free low-frequency permittivity with a sharp maximum and pronounced soft mode behavior. Our results suggest that strained perfectly stoichiometric SrTiO3 films should not show relaxor behavior and that relaxor behavior emerges from defect dipoles that arise from non-stoichiometry in the highly polarizable strained SrTiO3 matrix.
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25 February 2013
Research Article|
March 01 2013
Effect of stoichiometry on the dielectric properties and soft mode behavior of strained epitaxial SrTiO3 thin films on DyScO3 substrates
Che-Hui Lee;
Che-Hui Lee
1
Department of Materials Science and Engineering, Cornell University
, Ithaca, New York 14853, USA
2
Department of Materials Science and Engineering, Pennsylvania State University, University Park
, Pennsylvania 16802, USA
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Volodymyr Skoromets;
Volodymyr Skoromets
3
Institute of Physics, ASCR
, Na Slovance 2, 182 21 Prague 8, Czech Republic
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Michael D. Biegalski;
Michael D. Biegalski
4
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
, Oak Ridge, Tennessee 37831, USA
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Shiming Lei;
Shiming Lei
2
Department of Materials Science and Engineering, Pennsylvania State University, University Park
, Pennsylvania 16802, USA
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Ryan Haislmaier;
Ryan Haislmaier
2
Department of Materials Science and Engineering, Pennsylvania State University, University Park
, Pennsylvania 16802, USA
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Margitta Bernhagen;
Margitta Bernhagen
5
Leibniz Institute for Crystal Growth
, Max-Born-Straße 2, D-12489 Berlin, Germany
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Reinhard Uecker;
Reinhard Uecker
5
Leibniz Institute for Crystal Growth
, Max-Born-Straße 2, D-12489 Berlin, Germany
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Xiaoxing Xi;
Xiaoxing Xi
6
Department of Physics, Temple University, Philadelphia
, Pennsylvania 19122, USA
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Venkatraman Gopalan;
Venkatraman Gopalan
2
Department of Materials Science and Engineering, Pennsylvania State University, University Park
, Pennsylvania 16802, USA
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Xavier Martí;
Xavier Martí
3
Institute of Physics, ASCR
, Na Slovance 2, 182 21 Prague 8, Czech Republic
7
Department of Physics, Faculty of Mathematics and Physics, Charles University
, Prague, Czech Republic
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Stanislav Kamba;
Stanislav Kamba
3
Institute of Physics, ASCR
, Na Slovance 2, 182 21 Prague 8, Czech Republic
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Petr Kužel;
Petr Kužel
3
Institute of Physics, ASCR
, Na Slovance 2, 182 21 Prague 8, Czech Republic
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Darrell G. Schlom
Darrell G. Schlom
a)
1
Department of Materials Science and Engineering, Cornell University
, Ithaca, New York 14853, USA
8
Kavli Institute at Cornell for Nanoscale Science, Ithaca
, New York 14853, USA
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a)
Electronic mail: [email protected].
Appl. Phys. Lett. 102, 082905 (2013)
Article history
Received:
December 03 2012
Accepted:
February 12 2013
Citation
Che-Hui Lee, Volodymyr Skoromets, Michael D. Biegalski, Shiming Lei, Ryan Haislmaier, Margitta Bernhagen, Reinhard Uecker, Xiaoxing Xi, Venkatraman Gopalan, Xavier Martí, Stanislav Kamba, Petr Kužel, Darrell G. Schlom; Effect of stoichiometry on the dielectric properties and soft mode behavior of strained epitaxial SrTiO3 thin films on DyScO3 substrates. Appl. Phys. Lett. 25 February 2013; 102 (8): 082905. https://doi.org/10.1063/1.4793649
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