We report the results of relative intensity noise (RIN) measurement on the ground and first excited state transitions of a single quantum-well (QW) transistor laser (TL). Because of higher differential gain and faster recombination lifetime on the first excited state transition, a lower laser RIN is measured as compared with ground state laser operation. The minority carrier density in the base of QWTL extracted from the laser RIN shows a carrier density of 2.6–3.5 × 1016 cm−3, a more than 40× reduction from that of a conventional diode laser.

Topics
Electronic transport, Amplifiers, Quantum wells, Transistors, Electronic noise, Signal processing, Optical properties, Laser resonators, Lasers, Laser physics
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© 2013 American Institute of Physics.
2013
American Institute of Physics
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