We investigated how dimensionality affects heat transport in Si-Ge superlattices (SLs) by computing the thermal conductivity of planar superlattices and arrays of Ge nanowires (NWs) and nanodots embedded in Si. We studied superlattices with ∼10 nm periods using a fully atomistic Monte Carlo solution of the Boltzmann transport equation in the relaxation time approximation. We found that for periods larger than 4 nm, the room temperature cross-plane conductivity of planar superlattices with equally thick Si and Ge layers is larger than that of their nanowire and dot counterparts of similar sizes (up to 100%), while the trend is reversed below 4 nm.
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See supplementary material at http://dx.doi.org/10.1063/1.4792748 for (i) more detailed information about our Monte Carlo scheme, (ii) definitions of the density of states and the average group velocity shown in Fig. 4, and (iii) more detailed information about transferability of our predictions.
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2013
American Institute of Physics
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