Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases.

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