The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices.
Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures
Yuanjun Yang, Z. L. Luo, Meng Meng Yang, Haoliang Huang, Haibo Wang, J. Bao, Guoqiang Pan, C. Gao, Qiang Hao, Shutong Wang, Michael Jokubaitis, Wenzhe Zhang, Gang Xiao, Yiping Yao, Yukuai Liu, X. G. Li; Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures. Appl. Phys. Lett. 21 January 2013; 102 (3): 033501. https://doi.org/10.1063/1.4788723
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