A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 103. It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.
REFERENCES
1.
K. S.
Novoselov
, A. K.
Geim
, S. V.
Morozov
, D.
Jiang
, Y.
Zhang
, S. V.
Dubonos
, I. V.
Grigorieva
, and A. A.
Firsov
, Science
306
, 666
(2004
).2.
A. K.
Geim
, Science
324
, 1530
(2009
).3.
Y. B.
Zhang
, Y. W.
Tan
, H. L.
Stormer
, and P.
Kim
, Nature
438
, 201
(2005
).4.
C.
Berger
, Z.
Song
, T.
Li
, X.
Li
, X.
Wu
, N.
Brown
, C.
Naud
, D.
Mayou
, A. N.
Marchenko
, E. H.
Conrad
et al., Science
312
, 1191
(2006
).5.
Y. M.
Lin
, C.
Dimitrakopoulos
, K. A.
Jenkins
, D. B.
Farmer
, H. Y.
Chiu
, A.
Grill
, and P.
Avouris
, Science
327
, 662
(2010
).6.
X. S.
Li
, W. W.
Cai
, J. H.
An
, S. Y.
Kim
, J. H.
Nah
, D. X.
Yang
, R.
Piner
, A.
Velamakanni
, I. H.
Jung
, E.
Tutuc
et al., Science
324
, 1312
(2009
).7.
S.
Bae
, H.
Kim
, Y.
Lee
, X. F.
Xu
, J. S.
Park
, Y.
Zheng
, J.
Balakrishnan
, T.
Lei
, H. R.
Kim
, Y. I.
Song
et al., Nat. Nanotechnol.
5
, 574
(2010
).8.
S.-K.
Lee
, B. J.
Kim
, H.
Jang
, S. C.
Yoon
, C.
Lee
, B. H.
Hong
, J. A.
Rogers
, J. H.
Cho
, and J.-H.
Ahn
, Nano Lett.
11
, 4642
(2011
).9.
S.-K.
Lee
, H. Y.
Jang
, S.
Jang
, E.
Choi
, B. H.
Hong
, J.
Lee
, S.
Park
, and J.-H.
Ahn
, Nano Lett.
12
, 3472
(2012
).10.
W.
Yang
, K. R.
Ratinac
, S. P.
Ringer
, P.
Thordarson
, J. J.
Gooding
, and F.
Braet
, Angew. Chem., Int. Ed.
49
, 2114
(2010
).11.
F.
Schedin
, A. K.
Geim
, S. V.
Morozov
, E. W.
Hill
, P.
Blake
, M. I.
Katsnelson
, and K. S.
Novoselov
, Nature Mater.
6
, 652
(2007
).12.
G.
Kalon
, Y. J.
Shin
, and H.
Yang
, Appl. Phys. Lett.
98
, 233108
(2011
).13.
Y. J.
Shin
, Y.
Wang
, H.
Huang
, G.
Kalon
, A. T. S.
Wee
, Z.
Shen
, C. S.
Bhatia
, and H.
Yang
, Langmuir
26
, 3798
(2010
).14.
Y. J.
Shin
, J. H.
Kwon
, G.
Kalon
, K. T.
Lam
, C. S.
Bhatia
, G.
Liang
, and H.
Yang
, Appl. Phys. Lett.
97
, 262105
(2010
).15.
T. J.
Echtermeyer
, M. C.
Lemme
, M.
Baus
, B. N.
Szafranek
, A. K.
Geim
, and H.
Kurz
, IEEE Electron Device Lett.
29
, 952
(2008
).16.
J.
Moser
, A.
Barreiro
, and A.
Bachtold
, Appl. Phys. Lett.
91
, 163513
(2007
).17.
A.
Vijayaraghavan
, K.
Kanzaki
, S.
Suzuki
, Y.
Kobayashi
, H.
Inokawa
, Y.
Ono
, S.
Kar
, and P. M.
Ajayan
, Nano Lett.
5
, 1575
(2005
).18.
C. W.
Marquardt
, S.
Dehm
, A.
Vijayaraghavan
, S.
Blatt
, F.
Hennrich
, and R.
Krupke
, Nano Lett.
8
, 2767
(2008
).19.
Y.
Meir
and N. S.
Wingreen
, Phys. Rev. Lett.
68
, 2512
(1992
).20.
Y. J.
Shin
, G.
Kalon
, J.
Son
, J. H.
Kwon
, J.
Niu
, C. S.
Bhatia
, G. C.
Liang
, and H.
Yang
, Appl. Phys. Lett.
97
, 252102
(2010
).© 2013 American Institute of Physics.
2013
American Institute of Physics
You do not currently have access to this content.