We fabricated self-assembled one-dimensional α-FeSi2 magnetic nano-stripes, using solid phase epitaxy of ∼1 monolayer Fe on vicinal Si(111) surfaces followed by a 550 °C annealing. Structural and magnetic properties were investigated by scanning tunneling microscopy and superconducting quantum interference device magnetometry, respectively. The nano-stripes show superparamagnetism at room-temperature and at 4 K coercivity about 3 times higher along the long nano-stripe direction than along the perpendicular one. The calculated magnetic moment at 4 K was ∼3.3 /Fe atom, implying a significant ferromagnetic coupling of the Fe atoms in the system. Such nano-stripes may be useful in high-density magnetic memory storage and spintronics devices.
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24 June 2013
Research Article|
June 26 2013
Self-ordered magnetic α-FeSi2 nano-stripes on Si(111)
J. K. Tripathi;
J. K. Tripathi
a)
1
School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University
, Ramat Aviv, Tel Aviv 69978, Israel
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G. Markovich;
G. Markovich
2
Research Center for Nanoscience and Nanotechnology, Tel Aviv University
, Ramat Aviv, Tel Aviv 69978, Israel
3
School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Science, Tel Aviv University
, Ramat Aviv, Tel Aviv 69978, Israel
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I. Goldfarb
I. Goldfarb
b)
1
School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University
, Ramat Aviv, Tel Aviv 69978, Israel
2
Research Center for Nanoscience and Nanotechnology, Tel Aviv University
, Ramat Aviv, Tel Aviv 69978, Israel
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a)
Present address: Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
b)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 102, 251604 (2013)
Article history
Received:
January 20 2013
Accepted:
June 09 2013
Citation
J. K. Tripathi, G. Markovich, I. Goldfarb; Self-ordered magnetic α-FeSi2 nano-stripes on Si(111). Appl. Phys. Lett. 24 June 2013; 102 (25): 251604. https://doi.org/10.1063/1.4812239
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