Ultraviolet laser diodes grown on semipolar $(202¯1)$ GaN substrates by plasma-assisted molecular beam epitaxy Available to Purchase

We demonstrate ultra-violet laser diodes emitting at 388 nm grown by plasma-assisted molecular beam epitaxy on semipolar $(202¯1)$GaN substrates under metal-rich conditions. The threshold current density and voltage of 13.2 kA/cm² and 10.8 V were measured at room temperature for devices with the laser ridge waveguide oriented along the $[1¯21¯0]$ direction. We show smooth, atomically flat surface morphology after growth. The excellent structural quality of the laser heterostructure was corroborated by transmission electron microscopy.