In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1−xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80–100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.
REFERENCES
1.
J. C.
Bean
, Proc, IEEE
80
, 571
(1992
).2.
H.
Kroemer
, Surf. Sci.
132
, 543
(1983
).3.
J. C.
Bean
, L. C.
Feldman
, A. T.
Fiory
, S.
Nakahara
, and I. K.
Robinson
, J. Vac. Sci. Technol. A
2
, 436
(1984
).4.
J.
Pelletier
, D.
Gervais
, and C.
Pomot
, J. Appl. Phys.
55
, 994
(1984
).5.
C.
Long
, S. A.
Ustin
, and W.
Ho
, J. Appl. Phys.
86
, 2509
(1999
).6.
C.
Martinet
, V.
Paillard
, A.
Gagnaire
, and J.
Joseph
, J. Non-Cryst. Solids
216
, 77
(1997
).7.
B. S.
Richards
, J. E.
Cotter
, and C. B.
Honsberg
, Appl. Phys. Lett.
80
, 1123
(2002
).8.
W. D.
Brown
and W. W.
Grannemann
, Solid-State Electron.
21
, 837
(1978
).9.
D.
Gebeyehu
, C. J.
Brabec
, N. S.
Sariciftci
, D.
Vangeneugden
, R.
Kiebooms
, D.
Vanderzande
, F.
Kienberger
, and H.
Schindler
, Synth. Met.
125
, 279
(2001
).10.
W.
Kern
, J. Electrochem. Soc.
137
, 1887
(1990
).11.
T. J.
Dennes
and J.
Schwartz
, J. Am. Chem. Soc.
131
, 3456
(2009
).12.
T. J.
Dennes
and J.
Schwartz
, ACS Appl. Mater. Interfaces
1
, 2119
(2009
).13.
R.
Methaapanon
and S. F.
Bent
, J. Phys. Chem. C
114
, 10498
(2010
).14.
U.
Diebold
, Surf. Sci. Rep.
48
, 53
(2003
).15.
J.
Moulder
, W.
Stickle
, P.
Sobol
, and K.
Bomben
, Handbook of X-ray Photoelectron Spectroscopy
(Physical Electronics, Inc.
, 1995
).16.
P. Y.
Huang
, C. S.
Ruiz-Vargas
, A. M.
van der Zande
, W. S.
Whitney
, M. P.
Levendorf
, J. W.
Kevek
, S.
Garg
, J. S.
Alden
, C. J.
Hustedt
, Y.
Zhu
, J.
Park
, P. L.
McEuen
, and D. A.
Muller
, Nature
469
, 389
(2011
).17.
M.
Ritala
, M.
Leskela
, L.
Niinisto
, and P.
Haussalo
, Chem. Mater.
5
(8
), 1174
(1993
).18.
Y. W.
Chung
, W. J.
Lo
, and G. A.
Somorjai
, Surf. Sci.
64
, 588
(1977
).19.
H. C.
Card
, IEEE Trans. Electron Devices
23
, 538
(1976
).20.
H. J.
Hovel
and J. M.
Woodall
, J. Electrochem. Soc.
120
, 1246
(1973
).21.
M.
Tanaka
, M.
Taguchi
, T.
Matsuyama
, T.
Sawada
, S.
Tsuda
, S.
Nakano
, H.
Hanafusa
, and Y.
Kuwano
, Jpn. J. Appl. Phys., Part 1
31
, 3518
(1992
).22.
S.
Avasthi
, S.
Lee
, Y. L.
Loo
, and J.
Sturm
, Adv. Mater.
23
, 5762
(2011
).© 2013 AIP Publishing LLC.
2013
AIP Publishing LLC
You do not currently have access to this content.