Rayleigh analysis has been used to investigate the temperature dependence of the dielectric response of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 films grown on platinized silicon substrates by chemical solution deposition. The irreversible contribution to dielectric permittivity maximizes at 50 °C and decreases with further temperature increase; while the intrinsic/reversible contribution is weakly dependent on temperature. The relaxor ferroelectric transition temperature Tm increases from 160 °C to 172 °C when the frequency increases from 1 kHz to 100 kHz. The dielectric nonlinearity decreases with temperature: falling from 0.012 cm/kV at room temperature to 0.005 cm/kV at 225 °C in tests at 1 kHz.

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