This letter reports on residual stress measurement in thin crystalline silicon wafers with a full-field near-infrared polariscope. Residual stress is analyzed in combination with observed surface defects, and the results are related to measured fracture strength variation in the wafers. Measurements indicate that there is a sawing process-related residual stress in the as-cut wafers, and that etch-removal of ∼5 μm from the wafer surface eliminates a damage layer that can significantly reduce the residual stress in the wafer, and therefore increases the observed fracture strength. There is a corresponding 2 to 3 μm reduction in the observed characteristic defect size after etching. Fracture strength anisotropy observed in the wafers is related to defect orientation (scratching grooves and microcracks) caused by the sawing process.
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14 January 2013
Research Article|
January 16 2013
On the residual stress and fracture strength of crystalline silicon wafers
Chris Yang;
Chris Yang
1
Georgia Tech Manufacturing Institute, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Frank Mess;
Frank Mess
1
Georgia Tech Manufacturing Institute, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Kevin Skenes;
Kevin Skenes
2
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Shreyes Melkote;
Shreyes Melkote
1
Georgia Tech Manufacturing Institute, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
2
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Steven Danyluk
Steven Danyluk
2
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Appl. Phys. Lett. 102, 021909 (2013)
Article history
Received:
November 28 2012
Accepted:
January 02 2013
Citation
Chris Yang, Frank Mess, Kevin Skenes, Shreyes Melkote, Steven Danyluk; On the residual stress and fracture strength of crystalline silicon wafers. Appl. Phys. Lett. 14 January 2013; 102 (2): 021909. https://doi.org/10.1063/1.4776706
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