We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.
REFERENCES
1.
J.-P.
Colinge
, Silicon-on-Insulator Technology: Materials to VLSI
, 2nd ed. (Kluwer Academic Publishers
, Boston/Dordrecht/London
, 1997
).2.
J. T. M.
van Beek
and R.
Puers
, J. Micromech. Microeng.
22
, 013001
(2012
).3.
M.
Eichenfield
, J.
Chan
, R. M.
Camacho
, K. J.
Vahala
, and O.
Painter
, Nature (London)
462
, 78
–82
(2009
).4.
E.
Dulkeith
, S. J.
McNab
, and Y. A.
Vlasov
, Phys. Rev. B
72
, 115102
(2005
).5.
C.
Yu
, X.
Li
, T.
Ma
, J.
Rong
, R.
Zhang
, J.
Shaffer
, Y.
An
, Q.
Liu
, B.
Wei
, and H.
Jiang
, Adv. Energy Mater.
2
, 68
–73
(2012
).6.
A.
Balandin
and K. L.
Wang
, Phys. Rev. B
58
, 1544
–1549
(1998
).7.
M.
Schmotz
, P.
Bookjans
, E.
Scheer
, and P.
Leiderer
, Rev. Sci. Instrum.
81
, 114903
(2010
).8.
J.
Groenen
, F.
Poinsotte
, A.
Zwick
, C. M.
Sotomayor Torres
, M.
Prunnila
, and J.
Ahopelto
, Phys. Rev. B
77
, 045420
(2008
).9.
J.
Cuffe
, E.
Chavez
, A.
Shchepetov
, P.-O.
Chapuis
, E. H.
El Boudouti
, F.
Alzina
, T.
Kehoe
, J.
Gomis-Bresco
, D.
Dudek
, Y.
Pennec
, B.
Djafari-Rouhani
, M.
Prunnila
, J.
Ahopelto
, and C. M.
Sotomayor Torres
, Nano Lett.
12
, 3569
–3573
(2012
).10.
T.
Iida
, T.
Itoh
, D.
Noguchi
, and Y.
Takano
, J. Appl. Phys.
87
, 675
–681
(2000
).11.
J. A.
Rogers
, M. G.
Lagally
, and R. G.
Nuzzo
, Nature (London)
477
, 45
–53
(2011
).12.
P. E.
Allain
, X.
Le Roux
, F.
Parrain
, and A.
Bosseboeuf
, J. Micromech. Microeng.
23
, 015014
(2013
).13.
C. M.
Sotomayor Torres
, A.
Zwick
, F.
Poinsotte
, J.
Groenen
, M.
Prunnila
, J.
Ahopelto
, A.
Mlayah
, and V.
Paillard
, Phys. Status Solidi C
1
, 2609
–2612
(2004
).14.
M. M.
Roberts
, L. J.
Klein
, D. E.
Savage
, K. A.
Linker
, M.
Friesen
, G.
Celler
, M. A.
Eriksson
, and M. G.
Lagally
, Nat. Mater.
5
, 388
–393
(2006
).15.
D.
Wang
, H.
Nakashima
, J.
Morioka
, and T.
Kitamura
, Appl. Phys. Lett.
91
, 241918
(2007
).16.
J.
Camassel
, L. A.
Falkovsky
, and N.
Planes
, Phys. Rev. B
63
, 035309
(2000
).17.
I.
De Wolf
, Semicond. Sci. Technol.
11
, 139
(1996
).18.
Properties of Crystalline Silicon
, edited by R.
Hull
(INSPEC: The Institution of Electric Engineers
, London
, 1999
).19.
M.
Chandrasekhar
, J. B.
Renucci
, and M.
Cardona
, Phys. Rev. B
17
, 1623
–1633
(1978
).20.
C.
Herring
and E.
Vogt
, Phys. Rev.
101
, 944
–961
(1956
).21.
E.
Ungersboeck
, S.
Dhar
, G.
Karlowatz
, V.
Sverdlov
, H.
Kosina
, and S.
Selberherr
, IEEE Trans. Electron Devices
54
, 2183
–2190
(2007
).22.
J. T.
Muhonen
, M. J.
Prest
, M.
Prunnila
, D.
Gunnarsson
, V. A.
Shah
, A.
Dobbie
, M.
Myronov
, R. J. H.
Morris
, T. E.
Whall
, E. H. C.
Parker
, and D. R.
Leadley
, Appl. Phys. Lett.
98
, 182103
(2011
).23.
S.
Richard
, G.
Aniel
, and F.
Fishman
, J. Appl. Phys.
94
, 1795
–1799
(2003
).24.
D.
Donadio
and G.
Galli
, Phys. Rev. Lett.
102
, 195901
(2009
).© 2013 AIP Publishing LLC.
2013
AIP Publishing LLC
You do not currently have access to this content.