Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
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29 April 2013
Research Article|
May 01 2013
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Special Collection:
2D Transistors
Deep Jariwala;
Deep Jariwala
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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Vinod K. Sangwan;
Vinod K. Sangwan
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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Dattatray J. Late;
Dattatray J. Late
a)
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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James E. Johns;
James E. Johns
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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Vinayak P. Dravid;
Vinayak P. Dravid
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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Tobin J. Marks;
Tobin J. Marks
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
2
Department of Chemistry, Northwestern University
, Evanston, Illinois 60208, USA
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Lincoln J. Lauhon;
Lincoln J. Lauhon
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
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Mark C. Hersam
Mark C. Hersam
b)
1
Department of Materials Science and Engineering
, Northwestern University
, Evanston, Illinois 60208, USA
2
Department of Chemistry, Northwestern University
, Evanston, Illinois 60208, USA
3
Department of Medicine, Northwestern University
, Evanston, Illinois 60208, USA
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a)
Present address: National Chemical Laboratory, Pune, Maharashtra, India.
b)
Author to whom correspondence should be addressed. Electronic mail: m-hersam@northwestern.edu.
Appl. Phys. Lett. 102, 173107 (2013)
Article history
Received:
March 12 2013
Accepted:
April 16 2013
Citation
Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam; Band-like transport in high mobility unencapsulated single-layer MoS2 transistors. Appl. Phys. Lett. 29 April 2013; 102 (17): 173107. https://doi.org/10.1063/1.4803920
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