We report on low temperature transport studies of Bi2Te3 topological insulator thin films grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy
Anupam Roy, Samaresh Guchhait, Sushant Sonde, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Hema C. P. Movva, Luigi Colombo, Sanjay K. Banerjee; Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Appl. Phys. Lett. 22 April 2013; 102 (16): 163118. https://doi.org/10.1063/1.4803018
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