A method for determining concentrations from high-angle annular dark field-scanning transmission electron microscopy images is presented. The method is applied to an InGaN/GaN multi-quantum well structure with high In content, as used for the fabrication of light emitting diodes and laser diodes emitting in the green spectral range. Information on specimen thickness and In concentration is extracted by comparison with multislice calculations. Resulting concentration profiles are in good agreement with a comparative atom probe tomography analysis. Indium concentrations in the quantum wells ranging from 26 at. % to 33 at. % are measured in both cases.
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See supplementary material at http://dx.doi.org/10.1063/1.4799382 for a parameterization of the simulated reference data of Fig. 3a) for reproduction.
© 2013 American Institute of Physics.
2013
American Institute of Physics
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