Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures Available to Purchase

The converse piezoelectric effect on misfit dislocation (MD) generation and scattering in metal/AlGaN/GaN structures was quantitatively studied. The critical thickness of the structure decreased with increasing electric field in the growth direction and reached the maximum value at the zero field. The predicted MD density was in the order of 10⁵ cm⁻¹, which can be tuned by the gate voltage. The calculation result shows that MD scattering is a dominant limitation for electron mobility.