Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN $(202¯1)$ substrates Available to Purchase

Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar $(202¯1)$ and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar $(202¯1)$ and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.