Electron spin dephasing dynamics of ferromagnetic Ga1−xMnxAs with Mn concentration spanning from 0.5% to 15% across the insulator-to-metal transition is systematically studied using time-resolved magneto-optical Kerr effect measurements. In the insulating Ga1−xMnxAs, the impurity scattering and s-d exchange scattering induced by the magnetic impurity Mn ions are responsible for the electron spin dephasing process. While in the metallic and near metallic regime, the electron-electron Coulomb scattering becomes dominant over the impurity scattering on the spin dephasing process with D'yakonov-Perel' mechanism. Our findings are important for better engineering of Mn impurity doping in order to achieve potential Ga1−xMnxAs-based spintronics application.
Electron spin dynamics of ferromagnetic Ga1−x Mnx As across the insulator-to-metal transition
Han Yue, Chunbo Zhao, Haixia Gao, Hailong Wang, Xuezhe Yu, Jianhua Zhao, Xinhui Zhang; Electron spin dynamics of ferromagnetic Ga1−x Mnx As across the insulator-to-metal transition. Appl. Phys. Lett. 11 March 2013; 102 (10): 102412. https://doi.org/10.1063/1.4795535
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