Structural and magnetic properties of epitaxial L10-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.

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