Structural and magnetic properties of epitaxial L10-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.

Topics
Magnetic anisotropy, Semiconductors, Magnetic fields, Magnetic properties, Crystal lattices, Epitaxy, Atomic force microscopy, Thin films, X-ray diffraction, Magnetooptical effects
© 2013 American Institute of Physics.
2013
American Institute of Physics
You do not currently have access to this content.