Film growth and reaction kinetics studies have shown that trigermane (Ge3H8) is a superior Ge source for the epitaxial synthesis of Ge1−ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional Ge2H6/SnD4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge1−ySny layers with Sn concentrations up to at least 9% and thicknesses approaching 1 μm. These thick films are found to be crucial for the observation of a strong, tunable photoluminescence signal near the threshold of the predicted direct-indirect bandgap crossover.

1.
S.
Groves
and
W.
Paul
,
Phys. Rev. Lett.
11
,
194
(
1963
).
2.
R. J.
Temkin
,
G. A. N.
Connell
, and
W.
Paul
,
Solid State Commun.
11
(
11
),
1591
(
1972
).
3.
F. A.
Trumbore
,
J. Electrochem. Soc.
103
(
11
),
597
(
1956
).
4.
D. J.
Paul
,
Semicond. Sci. Technol.
19
(
10
),
R75
(
2004
).
5.
R. F. C.
Farrow
,
D. S.
Robertson
,
G. M.
Williams
,
A. G.
Cullis
,
G. R.
Jones
,
I. M.
Young
, and
M. J.
Dennis
,
J. Cryst. Growth
54
,
507
(
1981
).
6.
C. H. L.
Goodman
,
IEE J. Solid-State Electron Devices
129
(
5
),
189
(
1982
).
7.
C. H. L.
Goodman
,
Jpn. J. Appl. Phys.
22
(
Suppl. 1
),
583
(
1982
).
8.
J. P.
Leonard
,
B.
Shin
,
J. W.
McCamy
, and
M. J.
Aziz
,
Mater. Res. Soc. Symp. Proc.
749
,
W16
.
11
(
2002
).
9.
S. I.
Shah
,
J. E.
Greene
,
L. L.
Abels
,
Q.
Yao
, and
P. M.
Raccah
,
J. Cryst. Growth
83
,
3
(
1987
).
10.
P. R.
Pukite
,
A.
Harwit
, and
S. S.
Iyer
,
Appl. Phys. Lett.
54
(
21
),
2142
(
1989
).
11.
G.
He
and
H. A.
Atwater
,
Appl. Phys. Lett.
68
(
5
),
664
(
1996
).
12.
R.
Loo
,
G.
Wang
,
L.
Souriau
,
J. C.
Lin
,
S.
Takeuchi
,
G.
Brammertz
, and
M.
Caymax
,
J. Electrochem. Soc.
157
(
1
),
H13
(
2010
).
13.
J.
Taraci
,
J.
Tolle
,
M. R. M.
Cartney
,
J.
Menendez
,
M. A.
Santana
,
D. J.
Smith
, and
J.
Kouvetakis
,
Appl. Phys. Lett.
78
,
3607
(
2001
).
14.
M.
Bauer
,
J.
Taraci
,
J.
Tolle
,
A. V. G.
Chizmeshya
,
S.
Zollner
,
D. J.
Smith
,
J.
Menendez
,
C.
Hu
, and
J.
Kouvetakis
,
Appl. Phys. Lett.
81
,
2992
(
2002
).
15.
B.
Vincent
,
F.
Gencarelli
,
H.
Bender
,
C.
Merckling
,
B.
Douhard
,
D. H.
Petersen
,
O.
Hansen
,
H. H.
Henrichsen
,
J.
Meersschaut
,
W.
Vandervorst
,
M.
Heyns
,
R.
Loo
, and
M.
Caymax
,
Appl. Phys. Lett.
99
(
15
),
152103
(
2011
).
16.
F.
Gencarelli
,
B.
Vincent
,
L.
Souriau
,
O.
Richard
,
W.
Vandervorst
,
R.
Loo
,
M.
Caymax
, and
M.
Heyns
,
Thin Solid Films
520
(
8
),
3211
(
2012
).
17.
J.
Mathews
,
R.
Roucka
,
J. Q.
Xie
,
S. Q.
Yu
,
J.
Menendez
, and
J.
Kouvetakis
,
Appl. Phys. Lett.
95
(
13
),
133506
(
2009
).
18.
R.
Roucka
,
J.
Mathews
,
C.
Weng
,
R.
Beeler
,
J.
Tolle
,
J.
Menendez
, and
J.
Kouvetakis
,
IEEE J. Quantum Electron.
47
(
2
),
213
(
2011
).
19.
R.
Roucka
,
R.
Beeler
,
J.
Mathews
,
M.-Y.
Ryu
,
Y.
Kee Yeo
,
J.
Meneéndez
, and
J.
Kouvetakis
,
J. Appl. Phys.
109
(
10
),
103115
(
2011
).
20.
J.
Mathews
,
R. T.
Beeler
,
J.
Tolle
,
C.
Xu
,
R.
Roucka
,
J.
Kouvetakis
, and
J.
Meneéndez
,
Appl. Phys. Lett.
97
(
22
),
221912
(
2010
).
21.
R.
Roucka
,
J.
Mathews
,
R. T.
Beeler
,
J.
Tolle
,
J.
Kouvetakis
, and
J.
Meneéndez
,
Appl. Phys. Lett.
98
(
6
),
061109
(
2011
).
22.
R.
Beeler
,
R.
Roucka
,
A.
Chizmeshya
,
J.
Kouvetakis
, and
J.
Menéndez
,
Phys. Rev. B
84
(
3
),
035204
(
2011
).
23.
G.
Grzybowski
,
R.
Roucka
,
J.
Mathews
,
L.
Jiang
,
R.
Beeler
,
J.
Kouvetakis
, and
J.
Menéndez
,
Phys. Rev. B
84
(
20
),
205307
(
2011
).
24.
V. R.
D’Costa
,
Y.
Fang
,
J.
Mathews
,
R.
Roucka
,
J.
Tolle
,
J.
Menendez
, and
J.
Kouvetakis
,
Semicond. Sci. Technol.
24
(
11
),
115006
(
2009
).
25.
G.
Grzybowski
,
L.
Jiang
,
R. T.
Beeler
,
T.
Watkins
,
A. V. G.
Chizmeshya
,
C.
Xu
,
J.
Menéndez
, and
J.
Kouvetakis
,
Chem. Mater.
24
(
9
),
1619
(
2012
).
26.
H.
Kim
,
N.
Taylor
,
T. R.
Bramblett
, and
J. E.
Greene
,
J. Appl. Phys.
84
(
11
),
6372
(
1998
).
27.
V. R.
D’Costa
,
C. S.
Cook
,
A. G.
Birdwell
,
C. L.
Littler
,
M.
Canonico
,
S.
Zollner
,
J.
Kouvetakis
, and
J.
Menendez
,
Phys. Rev. B
73
(
12
),
125207
(
2006
).
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