An interdigitated back contact silicon solar cell with conversion efficiency of 19.6% was fabricated by screen-printing the Ag paste. In the Ag paste, oxide glass frits were totally replaced by Al85Ni5Y8Co2, Al-based metallic glass (MG) ones. The thermoplastic forming of the MG in the super cooled liquid region led to large contact area at the interface between Ag electrodes and Si layers and thus to specific contact resistance (ρc) as low as 0.86 mΩ cm2. The specific contact resistance was a function of both contact area and thickness of the interlayer formed at the interface working as a tunneling barrier.
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