N-type Bi100−xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200 K; here, we investigate how filling multiple valence band pockets at the T and Η-points of the Brillouin zone produces high zT’s in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT > 1 in Bi, was used in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400 K) measurements of single crystals with 12 ≤ x ≤ 37 and polycrystals (x = 50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13.
Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping
Hyungyu Jin, Christopher M. Jaworski, Joseph P. Heremans; Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping. Appl. Phys. Lett. 30 July 2012; 101 (5): 053904. https://doi.org/10.1063/1.4740262
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