This paper reports a simple flexible electronics technology that is compatible with silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) processes. Compared with existing technologies such as direct fabrication on flexible substrates and transfer printing, the main advantage of this technology is its post-SOI-CMOS compatibility. Consequently, high-performance and high-density CMOS circuits can be first fabricated on SOI wafers using commercial foundry and then be integrated into flexible substrates. The yield is also improved by eliminating the transfer printing step. Furthermore, this technology allows the integration of various sensors and microfluidic devices. To prove the concept of this technology, flexible MOSFETs have been demonstrated.
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Research Article| July 31 2012
A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology
Hongen Tu, Yong Xu; A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology. Appl. Phys. Lett. 30 July 2012; 101 (5): 052106. https://doi.org/10.1063/1.4739937
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