We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green’s function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain.
Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions
Ajeesh M. Sahadevan, Ravi K. Tiwari, Gopinadhan Kalon, Charanjit S. Bhatia, Mark Saeys, Hyunsoo Yang; Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions. Appl. Phys. Lett. 23 July 2012; 101 (4): 042407. https://doi.org/10.1063/1.4738787
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