An un-doped SiGe/strained Si/SiGe quantum well was fabricated on p-type Si at 550 °C by hot-wall ultrahigh vacuum chemical vapor deposition. To induce a two-dimensional electron gas (2DEG) in the strained Si channel, a gate structure with Al2O3 and Cr/Au metal was deposited and biased at positive bias. The 2DEG mobility reaches 2 × 106 cm2/V s, a record value, at 0.3 K for 15 nm Si well with a 526 nm Si0.86Ge0.14 barrier layer. The dominant factors that limit the mobility are Coulomb scattering of background charges and interface roughness scattering. In addition, the threading dislocation scattering also plays a role to determine the peak mobility. Reduction of Ge concentration in the SiGe barrier layer and the relaxed buffer layer decreases the threading dislocation density and the roughness, effectively enhancing the mobility of the 2DEG in the Si channel.
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23 July 2012
Research Article|
July 26 2012
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
S.-H. Huang;
S.-H. Huang
1
Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University
, Taipei 10617, Taiwan
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T.-M. Lu;
T.-M. Lu
2
Department of Electrical Engineering, Princeton University
, New Jersey 08544, USA
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S.-C. Lu;
S.-C. Lu
3
Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University
, Taipei 10617, Taiwan
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C.-H. Lee;
C.-H. Lee
1
Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University
, Taipei 10617, Taiwan
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C. W. Liu;
C. W. Liu
a)
4
Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, Center for Condensed Matter Sciences, and Center for Emerging Material and Advanced Devices, National Taiwan University
, Taipei 10617, Taiwan and National Nano Device Labs, Hsinchu 30077, Taiwan
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D. C. Tsui
D. C. Tsui
2
Department of Electrical Engineering, Princeton University
, New Jersey 08544, USA
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 101, 042111 (2012)
Article history
Received:
March 14 2012
Accepted:
July 13 2012
Citation
S.-H. Huang, T.-M. Lu, S.-C. Lu, C.-H. Lee, C. W. Liu, D. C. Tsui; Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures. Appl. Phys. Lett. 23 July 2012; 101 (4): 042111. https://doi.org/10.1063/1.4739513
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