Static and dynamic ac responses of piezoresistive GaN microcantilevers, with integrated AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers, have been investigated. Very high gauge factor exceeding 3500 was exhibited by the microcantilevers, with quality factor determined from electronically transduced ac response exceeding 200 in air and 4500 at low pressure. The gauge factor reduced at resonance frequency of the cantilevers, possibly due to reduced charge exchange with surface donor and trap states. Ultrasonic waves generated in air by a piezochip, and in the Si substrate through photoacoustic effect, could be detected by the cantilevers with high sensitivity.
REFERENCES
1.
Z. Y.
Hu
, T.
Thundat
, and R. J.
Warmack
, J. Appl. Phys.
90
, 427
(2001
).2.
L. A.
Pinnaduwage
, A.
Gehl
, D. L.
Hedden
, G.
Muralidharan
, T.
Thundat
, R. T.
Lareau
, T.
Sulchek
, L.
Manning
, B.
Rogers
, M.
Jones
, and J. D.
Adams
, Nature
425
, 474
(2003
).3.
J.
Fritz
, M. K.
Baller
, H. P.
Lang
, H.
Rothuizen
, P.
Vettiger
, E.
Meyer
, H. J.
Guntherodt
, C.
Gerber
, and J. K.
Gimzewski
, Science
288
, 316
(2000
).4.
J. H.
Park
, T. Y.
Kwon
, D. S.
Yoon
, H.
Kim
, and T. S.
Kim
, Adv. Funct. Mater.
15
, 2021
(2005
).5.
K.
Naeli
and O.
Brand
, J. Appl. Phys.
105
, 014908
(2009
).6.
X. M.
Yu
, J.
Thaysen
, O.
Hansen
, and A.
Boisen
, J. Appl. Phys.
92
, 6296
(2002
).7.
V.
Cimalla
, J.
Pezoldt
, and O.
Ambacher
, J. Phys. D
40
, 6386
(2007
).8.
M.
Qazi
, N.
DeRoller
, A.
Talukdar
, and G.
Koley
, Appl. Phys. Lett.
99
, 193508
(2011
).9.
C. T.
Chang
, S. K.
Hsiao
, E. Y.
Chang
, C. Y.
Lu
, J. C.
Huang
, and C. T.
Lee
, IEEE Electron Device Lett.
30
, 213
(2009
).10.
R.
Gaska
, J. W.
Yang
, A. D.
Bykhovski
, M. S.
Shur
, V. V.
Kaminski
, and S. M.
Soloviov
, Appl. Phys. Lett.
72
, 64
(1998
).11.
M.
Chu
, A. D.
Koehler
, A.
Gupta
, T.
Nishida
, and S. E.
Thompson
, J. Appl. Phys.
108
, 104502
(2010
).12.
Y.
Liu
, M. Z.
Kauser
, D. D.
Schroepfer
, P. P.
Ruden
, J.
Xie
, Y. T.
Moon
, N.
Onojima
, H.
Morkoç
, K.-A.
Son
, and M. I.
Nathan
, Appl. Phys. Lett.
88
, 013505
(2006
).13.
T.
Zimmermann
, M.
Neuburger
, P.
Benkart
, F. J.
Hernandez-Guillen
, C.
Pietzka
, M.
Kunze
, I.
Daumiller
, A.
Dadgar
, A.
Krost
, and E.
Kohn
, IEEE Electron Device Lett.
27
, 309
(2006
).14.
M.
Eickhoff
, O.
Ambacher
, G.
Krotz
, and M.
Stutzmann
, J. Appl. Phys.
90
, 3383
(2001
).15.
O.
Yilmazoglu
, K.
Mutamba
, D.
Pavlidis
, and M. R.
Mbarga
, IEICE Trans. Electron.
E89-C
, 1037
(2006
).16.
R. E.
Lindley
, A. M.
Parkes
, K. A.
Keen
, E. D.
McNaghten
, and A. J.
Orr-Ewing
, Appl. Phys. B
86
, 707
(2007
).17.
V.
Koskinen
, J.
Fonsen
, K.
Roth
, and J.
Kauppinen
, Vib. Spectrosc.
48
, 16
(2008
).18.
J. C.
Doll
, S.
Park
, and B. L.
Pruitt
, J. Appl. Phys.
106
, 064310
(2009
).19.
G.
Koley
and M. G.
Spencer
, Appl. Phys. Lett.
86
, 042107
(2005
).20.
G.
Keskar
, B.
Elliott
, J.
Gaillard
, M. J.
Skove
, and A. M.
Rao
, Sens. Actuators A: Physical
147
, 203
(2008
).21.
I. L.
Ver
and L. L
Beranek
, Noise and Vibration Control Engineering: Principles and Applications
(John Wiley & Sons, Inc.
, New Jersey
, 1992
), pp. 1
–17
.22.
See supplementary material at http://dx.doi.org/10.1063/1.4772489 for a detailed calculation of noise and noise limited resolution of GaN microcantilever embedded with AlGaN/GaN HFET.
23.
G.
Shekhawat
, S.
Tark
, and V. P.
Dravid
, Science
311
, 1592
(2006
).© 2012 American Institute of Physics.
2012
American Institute of Physics
You do not currently have access to this content.