Topological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.
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Research Article| December 06 2012
Quantum capacitance in topological insulators under strain in a tilted magnetic field
M. Tahir, U. Schwingenschlögl; Quantum capacitance in topological insulators under strain in a tilted magnetic field. Appl. Phys. Lett. 3 December 2012; 101 (23): 231609. https://doi.org/10.1063/1.4770000
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