We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.
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Research Article| November 27 2012
Universal scaling of resistivity in bilayer graphene
Young Jun Shin;
Kalon Gopinadhan, Young Jun Shin, Hyunsoo Yang; Universal scaling of resistivity in bilayer graphene. Appl. Phys. Lett. 26 November 2012; 101 (22): 223111. https://doi.org/10.1063/1.4769042
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