We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.
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See supplementary material at http://dx.doi.org/10.1063/1.4769042 for the measured carrier concentration and the magnetoresistance data.
© 2012 American Institute of Physics.
2012
American Institute of Physics
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