Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of with the growth precursor is known to increase both the purity and deposition rate of materials such as at room temperature. Here, we show that inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed at room temperature.
REFERENCES
The curve shown here is not identical to that in Ref. 5 because we used a high flux, Gaussian electron beam rather than the low flux top-hat beam that had been used previously (Ref. 5) to minimize precursor depletion and enable quantitative modeling in the limit of zero net precursor flow via surface diffusion.
In this general discussion, we ignore changes in activation energies encountered when chemisorption requires excitation of internal degrees of freedom, and non-linear effects caused by adsorbate-adsorbate interactions (Ref. 13).
