We determined the band alignment of a graphene-insulator-semiconductor structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer a negative extrinsic charge present on the graphene surface. Also, we extract the graphene work function to be 4.56 eV, in excellent agreement with theoretical and experimental values in literature. Electron and hole injection from heavily doped p-type silicon (Si) are both observed. The barrier height from the top of the valence band of Si to the bottom of the conduction band of silicon dioxide (SiO2) is found to be 4.3 eV. The small optical absorption in graphene makes it a good transparent contact to enable the direct observation of hole injection from Si to graphene. The barrier height for holes escaping from the bottom of Si conduction band to the top of SiO2 valence band is found to be 4.6 eV.
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9 July 2012
Research Article|
July 11 2012
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Rusen Yan;
Rusen Yan
a)
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Qin Zhang;
Qin Zhang
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Wei Li;
Wei Li
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
3Key Laboratory for the Physics and Chemistry of Nano Devices,
Peking University
, Beijing, China
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Irene Calizo;
Irene Calizo
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
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Tian Shen;
Tian Shen
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
4Department of Physics,
Purdue University
, West Lafayette, Indiana 47907, USA
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Curt A. Richter;
Curt A. Richter
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
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Angela R. Hight-Walker;
Angela R. Hight-Walker
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
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Xuelei Liang;
Xuelei Liang
3Key Laboratory for the Physics and Chemistry of Nano Devices,
Peking University
, Beijing, China
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Alan Seabaugh;
Alan Seabaugh
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Debdeep Jena;
Debdeep Jena
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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Huili Grace Xing;
Huili Grace Xing
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
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David J. Gundlach;
David J. Gundlach
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
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N. V. Nguyen
N. V. Nguyen
b)
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
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Rusen Yan
1,2,a)
Qin Zhang
1,2
Wei Li
1,3
Irene Calizo
1
Tian Shen
1,4
Curt A. Richter
1
Angela R. Hight-Walker
1
Xuelei Liang
3
Alan Seabaugh
2
Debdeep Jena
2
Huili Grace Xing
2
David J. Gundlach
1
N. V. Nguyen
1,b)
1Semiconductor and Dimensional Metrology Division,
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899, USA
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
3Key Laboratory for the Physics and Chemistry of Nano Devices,
Peking University
, Beijing, China
4Department of Physics,
Purdue University
, West Lafayette, Indiana 47907, USA
a)
Electronic mail: [email protected].
b)
Electronic mail: [email protected].
Appl. Phys. Lett. 101, 022105 (2012)
Article history
Received:
May 30 2012
Accepted:
June 22 2012
Citation
Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt A. Richter, Angela R. Hight-Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, Huili Grace Xing, David J. Gundlach, N. V. Nguyen; Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy. Appl. Phys. Lett. 9 July 2012; 101 (2): 022105. https://doi.org/10.1063/1.4734955
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