Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on $Si/SiO2$ substrates have high carrier mobilities of up to $6300 cm2/Vs$⁠. Self-aligned spin-on-doping is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications.