We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on substrates have high carrier mobilities of up to . Self-aligned spin-on-doping is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications.
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet, Sushant Sonde, Sk. Fahad Chowdhury, Gary Carpenter, Emanuel Tutuc, Sanjay K. Banerjee; Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions. Appl. Phys. Lett. 29 October 2012; 101 (18): 183113. https://doi.org/10.1063/1.4765658
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