Widely varying mobility values of CdS metal-oxide-semiconductor field-effect transistors have been reported in the literature (μ = 1–48 cm2/Vs). Sulfide vacancies in CdS channel generated by an incomplete post deposition anneal are found to be the origin of scattered mobility values. The presence of sulfide vacancies can be easily diagnosed by simple electrical measurements checking a strong channel length dependence of mobility and an abrupt drain current increase due to the carrier ionization at sulfur vacancies.
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