The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance (TMR) values suggests higher Cl for low TMR junctions. Using Cole-Cole plots, the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values.
Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions
Ajeesh M. Sahadevan, Kalon Gopinadhan, Charanjit S. Bhatia, Hyunsoo Yang; Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions. Appl. Phys. Lett. 15 October 2012; 101 (16): 162404. https://doi.org/10.1063/1.4760279
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