Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
REFERENCES
The analysis of the strain field at the interfaces, which is beyond the aim of the present paper, will be tackled elsewhere by using higher spatial resolution methods for the local strain determination, such as geometric phase analysis in Ref. 11 and holodarkfield in Ref. 12, in addition to CBED.
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